Convegni ATI - Accesso riservato soci CTI

Autore: R. Cerny, V.Chab, P. Prikryl

Collana: CA - 49 - Perugia 1994

Note:
This paper presents an overview of thermal models for computational simulations of phase change processes in semiconducting components of electronic devices. Conditions for using equilibrium and monequilibrium models are analyzed, as well as the influence of density change due to thermal expansion and phase transitions. The process of combined melting and evaporation from the surface is also studied. The models are illustrated on the ArF and XeCl excimer laser irradiation of monocrystalline Si. The characteristics parameters of the laser induced phase change processes, i.e. the surface temperature, the positions and velocities of the solid/liquid and liquid/vapor interfaces, the melt duration, and the undercooling/overheating of the solid/liquid interface, are calculated in dependence on the laser energy density. Comparison of computational results with experimental measurements shows a very good agreement in all principal parameters.